2SB1184 / 2sb1243 transistors 1/3 power transistor ( ? 60v, ? 3a) 2SB1184 / 2sb1243 ! ! ! ! features 1) low v ce(sat) . v ce(sat) = -0.5v (typ.) (i c /i b = -2a / -0.2a) 2) complements the 2sd1760 / 2sd1864. ! ! ! ! structure epitaxial planar type pnp silicon transistor ! ! ! ! external dimensions (units : mm) 2SB1184 2sb1243 (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 (1) emitter (2) collector (3) base rohm : atv ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. ! ! ! ! absolute maximum ratings (ta=25 c) parameter v cbo v ceo v ebo i c p c tj tstg ? 60 v v v a (dc) c c ? 50 ? 5 ? 3 i cp a (pulse) ? 4.5 ? 1 1 15 1 2SB1184 2sb1243 w w (t c = 25 c) w ? 2 150 ? 55~ + 150 symbol limits unit ? 1 single pulse, pw = 100ms ? 2 printed circuit board, 1.7mm thick, collector copper plating 100mm 2 or larger. collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2SB1184 / 2sb1243 transistors 2/3 ! ! ! ! electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage dc current transfer ratio transition frequency output capacitance ? measured using pulse current. parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 60 ? 50 ? 5 ? ? 82 ? ? ? ? ? ? ? ? ? ? 70 50 ? ? ? ? 1 ? 1 390 ? 1 ? ? v i c =? 50 a i c =? 1ma i e =? 50 a v cb =? 40v v eb =? 4v v ce =? 3v, i c =? 0.5a i c /i b =? 2a/ ? 0.2a v ce =? 5v, i e = 0.5a, f = 30mhz v cb =? 10v, i e = 0a, f = 1mhz v v a a ? v ? ? v be(sat) ?? ? 1.2 i c /i b =? 1.5a/ ? 0.15a v mhz pf typ. max. unit conditions ? ! ! ! ! packaging specifications and h fe package code basic ordering unit (pieces) tl tv2 2500 2500 ? ? taping pqr h fe pqr 2SB1184 2sb1243 type h fe values are classified as follows : item p q r h fe 82~180 120~270 180~390 ! ! ! ! electrical characteristic curves base to emitter voltage : v be (v) collector current : i c (a) 0 ? 0.2 ? 1.4 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 1.8 ? 1.0 ? 0.6 ? 0.01 ? 0.05 ? 0.1 ? 0.02 ? 0.5 ? 1 ? 0.2 ? 5 ? 10 ? 2 v ce =? 3v ta = 100 c 25 c -25 c fig.1 grounded emitter propagation characteristics ? 1 0 ? 2 ? 3 ? 4 ? 5 0 ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 ? 3.0 i b = 0ma ? 5ma ? 10ma ? 15ma ? 20ma tc = 25 c collector current : i c (a) ? 50ma ? 45ma ? 40ma ? 35ma ? 30ma ? 25ma collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( ) fig.3 grounded emitter output characteristics ( ? ) ? 10 0 ? 20 ? 30 ? 40 ? 50 0 ? 0.5 ? 1.0 ? 2.0 ? 1.5 ? 2.5 ? 3.0 i b = 0ma i b =? 5ma ? 10ma ? 25ma ? 30ma ? 35ma ? 40ma ? 45ma ? 50ma ? 20ma ? 15ma p c = 15w collector current : i c (a) tc=25 c collector to emitter voltage : v ce (v)
2SB1184 / 2sb1243 transistors 3/3 ? 0.01 ? 0.05 ? 0.1 ? 0.02 ? 0.5 ? 1 ? 0.2 ? 5 ? 10 ? 2 1 5 10 2 50 100 20 500 1000 200 ta = 25 c v ce = ? 5v ? 3v dc current gain : h fe collector current : i c (a) fig.4 dc current gain vs. collector current ( ) ? 0.01 ? 0.02 ? 0.1 ? 0.05 ? 0.2 ? 1 ? 0.5 ? 2 ? 10 ? 5 1 5 10 2 50 100 20 500 1k 200 v ce =? 3v dc current gain : h fe collector current : i c (a) ta = 100 c 25 c ? 25 c fig.5 dc current gain vs. collector current ( ? ) ? 0.01 ? 0.02 ? 0.1 ? 0.05 ? 0.2 ? 1 ? 0.5 ? 2 ? 10 ? 5 ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 25 c i c /i b = 50/1 20/1 10/1 fig.6 collector-emitter saturation voltage vs.collector current collector current : i c (a) collector saturation voltage : v ce(sat) (v) base saturation voltage : v be(sat) (v) ? 0.01 ? 0.02 ? 0.1 ? 0.05 ? 0.2 ? 1 ? 0.5 ? 2 ? 10 ? 5 ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 l c /l b = 10 ta =? 25 c 25 c 100 c ta = 100 c 25 c ? 25 c v be(sat) v ce(sat) fig.7 collector-emitter saturation voltage vs. collector current base-emitter saturation voltage vs. collector current 12 10 5 20 100 50 200 1000 500 1 2 5 10 20 50 100 200 500 1000 emitter current : i e (ma) transition frequency : f t (mhz) ta = 25 c v ce =? 5v fig.8 gain bandwidth product vs. emitter current collector output capacitance : cob (pf) collector to base voltage : v cb (v) ? 0.2 ? 0.1 ? 0.5 ? 10 ? 5 ? 2 ? 1 ? 50 ? 20 ? 100 1 20 10 5 2 50 200 100 500 1000 ta = 25 c f = 1mhz i e = 0a fig.9 collector output capacitance vs. collector base voltage fig.10 safe operation area (2SB1184) ? 0.1 collector current : i c (a) collector to emitter voltage : v ce (v) ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1.0 ? 2.0 ? 5.0 ? 10.0 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 tc = 25 c ? single nonrepetitive pulse 100ms ? p w = 10ms ? dc fig.11 safe operation area (2sb1243) ? 0.1 collector current : i c (a) collector to emitter voltage : v ce (v) ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1.0 ? 2.0 ? 5.0 ? 10.0 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 tc = 25 c ? single nonrepetitive pulse i c max . (pulse) ? p w = 10ms ? 100ms ? dc
|
